英飞凌大中华区技术专家FAQ大总结
1. Q: 数据手册上描述NOR Flash器件的典型数据保持时间是20年，这20年是从何时开始计算？
A: Data retention of typical 20 years is the number of years from the last write on the flash. Data retention is dependent on the number of Program/Erase cycle, system field temperature, and cycling interval time. Contact Cypress for the guaranteed value of Program/Erase cycle and data retention.
2. Q: 数据手册上描述NOR Flash器件在在擦写1万次和10万次之后数据保持时间分别是20年和2年，这个是在怎样温度条件下的数据？
A: Generally, the assumption is 55 °C average temperature for data retention according to JEDEC.
3. Q: 如何理解NOR Flash器件上的DDR概念？
A: Double Date Rate (DDR) means that data can be taken on the rising and falling edges of CLK, and the data transfer speed is twice the SDR at the same CLK frequency. Most of Infineon's flash series support DDR features.
4. Q: 哪些因素会在NOR Flash擦写时影响最终的数据保持时间及寿命？
A: Data retention after Program/Erase cycling is determined by three main parameters:
l System Field Temperature (Program/Erase Cycling and Data Storage)
l Total number of Program/Erase Cycles
l Cycling Interval Time
For more information on Endurance and Data Retention Characterization of Cypress Flash Memory, see AN217979.
5. Q: 如果在NOR Flash器件擦除或写入的过程中意外掉电会产生什么样的影响？
A: If power loss occurs during erasing or programming, the operation may be interrupted and data in the erasing or programming area may become unstable and cause data errors in flash memory.
6. Q: 如何获得英飞凌NOR Flash产品的IBIS和Verilog模型？
A: For IBIS and Verilog models, please refer www.cypress.com/simulation-models.
